800 Single-Frequency DBR Laser Diode
Description
The 800 nm Distributed Bragg Reflector (DBR) Laser Diode is a high-performance, edge-emitting semiconductor laser designed for applications requiring stable, single-frequency output. Based on Photodigm’s monolithic Gallium Arsenide (GaAs) technology, this laser provides a single spatial mode beam with high output power ranging from 80 mW to 180 mW. Passivated facets ensure long-term reliability and enhanced device longevity.
This DBR laser is widely used in biomedical diagnostics, imaging systems, and low-noise pump sources for various optical applications. It features precise wavelength control with temperature tuning at 0.06 nm/°C and current tuning at 0.002 nm/mA, making it ideal for applications requiring fine wavelength adjustments. The laser is available in multiple packaging configurations, including Chip on Submount (CoS), TO-8, C-Mount, and Transmitter Optical Subassembly (TOSA), offering flexible integration options.
Designed for high spectral purity and low noise operation, the 800 nm DBR Laser Diode ensures optimal performance in demanding research and industrial environments.
800 Single-Frequency DBR Laser Diode
Specifications |
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|---|---|
| Center Wavelength: | 0.800 ± 0.006 um |
| Output Power: | 80-180 mW |
| Operating Current, Max (CW & Pulsed): | 250 mA |
| Optical Power At Max Operating Current: | 180 mW |
| Storage Temperature: | 0 to +75 °C |
| Nominal Laser Linewidth @ LIV Current: | 500 kHz |
| Temperature Tuning Rate: | 0.06 nm/ºC |
| Polarization Extinction Ratio: | -20 dB |
| Operating Temperature (Chip): | +5 to +45 °C |
| Beam Divergence @ FWHM (θ|| X θ⊥): | 6 x 28 º |
| Laser Forward Voltage: | 2 V |
Features
- Single-Frequency Operation: Delivers stable and narrow-linewidth output with a nominal linewidth of 500 kHz
- High Power Output: Provides optical power ranging from 80 mW to 180 mW
- Single Spatial Mode Beam: Ensures high precision and reliability for biomedical and spectroscopy applications
- Temperature and Current Tunable: Offers precise wavelength control with temperature tuning at 0.06 nm/°C and current tuning at 0.002 nm/mA
- Passivated Facets: Enhances device longevity and stability in continuous operation
- Multiple Package Options: Available in CoS, TO-8, C-Mount, and TOSA for easy integration
Applications
- Biomedical Diagnostics and Imaging: Provides stable light sources for high-resolution imaging and diagnostic equipment
- Low-Noise Pump Sources: Ideal for integration into pump laser applications requiring stable and low-noise performance
- Precision Measurement Systems: Used in applications that demand accurate wavelength control and stability
- Research & Development: Supports quantum optics, spectroscopy, and photonics research projects
For pricing, technical or any other questions please contact the supplier
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How to order?
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Ships from:
United States
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Sold by:
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On FindLight:
since 2019
Frequently Asked Questions
This laser diode is primarily used in biomedical diagnostics, imaging, and spectroscopy. It serves as a low-noise pump source for precision measurement systems and quantum optics research.
The laser operates at a nominal wavelength of 800 nm (±0.6 nm) with a power output range of 80–180 mW, ensuring stable and efficient performance.
Yes, it supports temperature and current tuning, with a temperature tuning rate of 0.06 nm/°C and a current tuning rate of 0.002 nm/mA, allowing precise wavelength adjustments.
The laser has a high SMSR of ≥40 dB, ensuring minimal spectral interference and high spectral purity for demanding applications.
This diode is highly sensitive to electrostatic discharge (ESD). It should be handled in a grounded environment, using wrist straps, and stored in an antistatic container with all leads shorted together.