808 Single-Frequency DBR Laser Diode

Specifications

Center Wavelength: 0.808 um
Output Power: 80 mW
Operating Current, Max (CW & Pulsed): 250 mA
Optical Power At Max Operating Current: 180 mW
Storage Temperature: 0 to +75 °C
Nominal Laser Linewidth @ LIV Current: 500 kHz
Temperature Tuning Rate: 0.06 nm/ºC
Polarization Extinction Ratio: -20 dB
Operating Temperature (Chip): +5 to +45 °C
Beam Divergence @ FWHM (θ|| X θ⊥): 6 x 28 º
Laser Forward Voltage: 2 V
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Features


  • Single Spatial Mode Beam: Ensures focused and precise light output for accurate applications

  • Low Threshold Current: 60 mA nominal, ensuring efficient operation with minimal power consumption

  • Excellent Thermal Stability: Operates reliably across a broad temperature range of 5°C to 70°C

  • High Power Output: Delivers up to 180 mW optical power, ideal for demanding applications

  • Low Noise Performance: Designed to minimize noise, making it suitable for sensitive diagnostic and imaging systems

  • Customizable Packages: Available in Chip on Submount (CoS), Mode-Hop Free (MHF), and TOSA configurations for flexibility in integration

  • Narrow Linewidth: Provides a narrow spectral linewidth, essential for precision applications requiring high spectral purity

  • Efficient Heat Management: Designed to maintain thermal stability under high-power conditions, extending device lifespan

  • Hermetically Sealed Options: Available with hermetically sealed packages for enhanced protection in harsh environments

  • Versatile Tuning Capability: Features temperature and current tuning for fine adjustments of the emission wavelength

Applications


  • Biomedical Diagnostics: Ideal for low-noise pump sources in diagnostic systems

  • Imaging Systems: Provides stable, high-power light sources for optical imaging technologies

  • Biomedical Research: Key component in research applications requiring precise light sources

  • Laser Pumping: Excellent for use in laser systems that require precise wavelength management