808 Single-Frequency DBR Laser Diode
Description
The 808 nm Series Distributed Bragg Reflector (DBR) Laser Diode is engineered for precision and reliability in high-performance applications. Utilizing Photodigm’s advanced monolithic single-frequency Gallium Arsenide (GaAs) laser technology, this edge-emitting laser diode delivers exceptional performance with a single spatial mode beam. Designed for biomedical diagnostics, imaging, and other critical applications, the 808 nm DBR diode features passivated facets for enhanced durability and longevity.
This laser operates with a nominal wavelength of 808 nm (±0.6 nm) and provides a power range of 80-180 mW, achieving a maximum optical power of 180 mW at 250 mA. The laser’s low noise, high slope efficiency of 0.85 W/A, and optimized threshold current of 60 mA make it ideal for low-noise pumping sources. The 808 nm Series also offers a wide operating temperature range of 5°C to 70°C and is available in various package options, including Chip on Submount (CoS), Mode-Hop Free (MHF), and Transmitter Optical Subassembly (TOSA) configurations.
808 Single-Frequency DBR Laser Diode
Specifications |
|
|---|---|
| Center Wavelength: | 0.808 ±.0.006 um |
| Output Power: | 80-180 mW |
| Operating Current, Max (CW & Pulsed): | 250 mA |
| Optical Power At Max Operating Current: | 180 mW |
| Storage Temperature: | 0 to +75 °C |
| Nominal Laser Linewidth @ LIV Current: | 500 kHz |
| Temperature Tuning Rate: | 0.06 nm/ºC |
| Polarization Extinction Ratio: | -20 dB |
| Operating Temperature (Chip): | +5 to +45 °C |
| Beam Divergence @ FWHM (θ|| X θ⊥): | 6 x 28 º |
| Laser Forward Voltage: | 2 V |
Features
- Single Spatial Mode Beam: Ensures focused and precise light output for accurate applications
- Low Threshold Current: 60 mA nominal, ensuring efficient operation with minimal power consumption
- Excellent Thermal Stability: Operates reliably across a broad temperature range of 5°C to 70°C
- High Power Output: Delivers up to 180 mW optical power, ideal for demanding applications
- Low Noise Performance: Designed to minimize noise, making it suitable for sensitive diagnostic and imaging systems
- Customizable Packages: Available in Chip on Submount (CoS), Mode-Hop Free (MHF), and TOSA configurations for flexibility in integration
- Narrow Linewidth: Provides a narrow spectral linewidth, essential for precision applications requiring high spectral purity
- Efficient Heat Management: Designed to maintain thermal stability under high-power conditions, extending device lifespan
- Hermetically Sealed Options: Available with hermetically sealed packages for enhanced protection in harsh environments
- Versatile Tuning Capability: Features temperature and current tuning for fine adjustments of the emission wavelength
Applications
- Biomedical Diagnostics: Ideal for low-noise pump sources in diagnostic systems
- Imaging Systems: Provides stable, high-power light sources for optical imaging technologies
- Biomedical Research: Key component in research applications requiring precise light sources
- Laser Pumping: Excellent for use in laser systems that require precise wavelength management
For pricing, technical or any other questions please contact the supplier
- No registration required
- No markups, no fees
- Direct contact with supplier
Contact Supplier
How to order?
-
Ships from:
United States
-
Sold by:
-
On FindLight:
since 2019
Frequently Asked Questions
The operating wavelength of the 808 nm DBR Laser Diode is 808 nm with a tolerance of ±0.6 nm. This precise wavelength makes it ideal for biomedical diagnostics and imaging applications.
The power range of the 808 nm DBR Laser Diode is between 80 mW and 180 mW. The maximum optical power output is 180 mW when operating at 250 mA.
The threshold current of the 808 nm DBR Laser Diode is nominally 60 mA, ensuring efficient operation with minimal power consumption.
Yes, the 808 nm DBR Laser Diode has an operating temperature range from 5°C to 70°C, providing reliable performance across a wide temperature spectrum. It is also designed with high thermal stability for demanding environments.
The 808 nm DBR Laser Diode is available in multiple packaging options, including Chip on Submount (CoS), Mode-Hop Free (MHF), and Transmitter Optical Subassembly (TOSA), offering flexibility for integration into different systems.