810 Single-Frequency DBR Laser Diode
Description
Product Description (180 words): The 810 nm DBR Laser Diode from Photodigm offers high performance and reliability, utilizing advanced Gallium Arsenide (GaAs) single-frequency laser technology. These edge-emitting diodes provide a high-power output range from 80 mW to 180 mW and are ideal for use in biomedical diagnostics and imaging applications, particularly as low-noise pump sources.
With a nominal operating wavelength of 810 nm ±0.6 nm, the diode features a single spatial mode beam and passivated facets for enhanced reliability and extended lifespan. It is available in various packaging options, including Chip on Submount (CoS), Mode-Hop Free (MHF), and Transmitter Optical Subassembly (TOSA).
The laser operates within a temperature range of 5°C to 70°C and provides a nominal slope efficiency of 0.9 W/A, with a threshold current of 60 mA. This versatile laser diode is an excellent choice for applications requiring stable performance and precise output.
810 Single-Frequency DBR Laser Diode
Specifications |
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|---|---|
| Center Wavelength: | 0.810 ±.0.006 um |
| Output Power: | 80-180 mW |
| Operating Current, Max (CW & Pulsed): | 250 mA |
| Optical Power At Max Operating Current: | 180 mA |
| Storage Temperature: | 0 to +75 °C |
| Nominal Laser Linewidth @ LIV Current: | 500 kHz |
| Temperature Tuning Rate: | 0.06 nm/ºC |
| Polarization Extinction Ratio: | -20 dB |
| Operating Temperature (Chip): | +5 to +45 °C |
| Beam Divergence @ FWHM (θ|| X θ⊥): | 6 x 28 º |
| Laser Forward Voltage: | 2 V |
Features
- High Power Output: Provides optical power up to 180 mW at maximum operating current (250 mA)
- Low-Noise Performance: Ideal for sensitive biomedical imaging and diagnostics applications
- Passivated Facets: Enhances reliability and ensures long-term durability
- Efficient Operation: Features a nominal slope efficiency of 0.9 W/A and threshold current of 60 mA
- Compact and Versatile Packaging: Available in Chip on Submount (CoS), Mode-Hop Free (MHF), and Transmitter Optical Subassembly (TOSA) options
Applications
- Biomedical Diagnostics: Used as a pump source for low-noise applications in medical imaging and diagnostics
- Imaging Systems: Provides stable, high-power output for laser-based imaging technologies
- Material Processing: Utilized in precise laser material processing applications
- Scientific Research: Ideal for precision measurement and analytical instrumentation
For pricing, technical or any other questions please contact the supplier
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How to order?
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Ships from:
United States
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Sold by:
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On FindLight:
since 2019
Frequently Asked Questions
The 810 nm DBR Laser Diode operates at a nominal wavelength of 810 nm with a tolerance of ±0.6 nm. This makes it ideal for applications that require precise wavelength characteristics.
The power range of the 810 nm DBR Laser Diode is between 80 mW and 180 mW. This high-power output ensures stable performance for demanding applications like biomedical imaging and diagnostics.
The 810 nm DBR Laser Diode is available in multiple packaging options, including Chip on Submount (CoS), Mode-Hop Free (MHF), and Transmitter Optical Subassembly (TOSA), providing flexibility for various integration needs.
The maximum operating current for the 810 nm DBR Laser Diode is 250 mA (CW & Pulsed). At this current, the diode delivers a maximum optical power of 180 mW.
The 810 nm DBR Laser Diode operates effectively within a case temperature range of 5°C to 70°C. For the laser chip itself, the operating temperature range is from 5°C to 45°C, ensuring reliable performance in various environmental conditions.