816 Single-Frequency DBR Laser Diode
Description
The 816 nm DBR Laser Diode from Photodigm is a high-performance edge-emitting laser diode, featuring advanced Gallium Arsenide (GaAs) technology. Designed for precision and reliability, it delivers a stable, single-frequency beam ideal for demanding applications in biomedical diagnostics and imaging. The diode operates at a nominal wavelength of 816 nm with a power range of 80 mW to 180 mW, making it an excellent low-noise pump source for a variety of biomedical applications, including optical coherence tomography (OCT), Raman spectroscopy, and other advanced diagnostic systems.
With a low threshold current of 50 mA and a slope efficiency of 0.9 W/A, this device ensures high energy conversion and efficient operation. The laser features passivated facets to enhance its reliability and longevity, even under continuous or pulsed operation. Its versatility is further extended by the availability of multiple package options, including Chip on Submount (CoS), Mode-Hop Free (MHF), and TO-8 C-Mount Transmitter Optical Subassembly (TOSA), allowing for seamless integration into various systems.
This laser diode is designed to operate reliably across a wide temperature range, from 5°C to 70°C, with stable performance at the laser chip level up to 45°C. With its precise wavelength, low noise, and high power output, the 816 nm DBR Laser Diode offers a superior solution for applications requiring consistent, high-performance laser sources.
816 Single-Frequency DBR Laser Diode
Specifications |
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|---|---|
| Center Wavelength: | 0.816 ±.0.006 um |
| Output Power: | 80-180 mW |
| Operating Current, Max (CW & Pulsed): | 250 mA |
| Optical Power At Max Operating Current: | 180 mW |
| Storage Temperature: | 0 to +70 °C |
| Nominal Laser Linewidth @ LIV Current: | 500 kHz |
| Temperature Tuning Rate: | 0.06 nm/ºC |
| Polarization Extinction Ratio: | -20 dB |
| Operating Temperature (Chip): | +5 to +45 °C |
| Beam Divergence @ FWHM (θ|| X θ⊥): | 6 x 28 º |
| Laser Forward Voltage: | 2 V |
Features
- High Output Power: Delivers optical power ranging from 80 mW to 180 mW, ensuring strong and reliable performance
- Low Threshold Current: Nominal threshold current of 50 mA ensures efficient operation and minimized power consumption
- High Slope Efficiency: Provides a slope efficiency of 0.9 W/A for improved energy conversion
- Precision Wavelength: Operates at a nominal wavelength of 816 nm ± 0.6 nm, ideal for biomedical applications
- Reliable Operation: Passivated facets for extended operational life and minimized degradation
- Multiple Packaging Options: Available in CoS, MHF, and TOSA formats for various integration needs
- Low Polarization Sensitivity: TE polarization for stable and predictable performance
Applications
- Biomedical Diagnostics: Ideal for low-noise pumping in diagnostic systems, including optical coherence tomography (OCT) and Raman spectroscopy
- Imaging Systems: Essential for use in imaging technologies that require stable and high-power laser sources
- Laser Pumping: Perfect for applications requiring efficient pump sources for fiber lasers
- Research and Development: Suitable for scientific research needing precise and stable laser sources with low noise characteristics
- Medical Instrumentation: Used in devices that demand high precision and reliability in therapeutic and diagnostic applications
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Ships from:
United States
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On FindLight:
since 2019
Frequently Asked Questions
The nominal wavelength of the 816 nm DBR Laser Diode is 816 nm ± 0.6 nm. This ensures precise and consistent performance in applications requiring a specific wavelength.
The maximum operating current for the 816 nm DBR Laser Diode is 250 mA. This allows the diode to operate at optimal power levels up to 180 mW.
The 816 nm DBR Laser Diode is primarily used in biomedical diagnostics and imaging, including applications such as optical coherence tomography (OCT) and Raman spectroscopy. Its low-noise performance makes it ideal for precise measurement and imaging applications.
The typical threshold current for the 816 nm DBR Laser Diode is 50 mA, ensuring efficient startup and operation with minimal power consumption.
The 816 nm DBR Laser Diode offers stable performance across a wide temperature range. It can operate at the laser chip level from 5°C to 45°C and at the case level from 5°C to 70°C, making it suitable for various environments.