852.347 Single-Frequency DBR Laser Diode
Description
The 852.347 nm DBR Laser Diode from Photodigm offers high-performance edge-emitting technology, ideal for Cesium-based atomic spectroscopy and Raman spectroscopy applications. Built on advanced monolithic single-frequency Gallium Arsenide (GaAs) technology, this laser provides a stable, single spatial mode beam with passivated facets to enhance reliability and longevity. I
t is specifically designed for precision in Cesium D2 transition measurements, with temperature stability guaranteed within ±10°C of room temperature. Available in multiple configurations, including Chip on Submount (CoS) and optional Mode-Hop Free (MHF) add-ons, the 852.347 nm DBR laser diode supports a broad optical power range from 10 mW to 240 mW.
With a nominal operating current of 30–350 mA, the laser provides excellent slope efficiency (0.6 to 0.9 W/A) and low threshold currents (as low as 30 mA). The device is well-suited for demanding spectroscopy applications and provides the necessary stability and performance for critical experimental setups.
852.347 Single-Frequency DBR Laser Diode
Specifications |
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|---|---|
| Center Wavelength: | 0.852 ±.0.006 um |
| Output Power: | 80-240 mW |
| Laser Forward Voltage: | 2 V |
| Operating Current, Max (CW & Pulsed): | 350 mA |
| Optical Power At Max Operating Current: | 240 mW |
| Storage Temperature: | 0 to +70 °C |
| Nominal Laser Linewidth @ LIV Current: | 500 kHz |
| Temperature Tuning Rate: | 0.06 nm/ºC |
| Polarization Extinction Ratio: | -20 dB |
| Operating Temperature (Chip): | +5 to +45 °C |
| Beam Divergence @ FWHM (θ|| X θ⊥): | 6 x 28 º |
Features
- High Power Range: 10–240 mW, ensuring optimal performance across different applications
- Stable Wavelength: Nominal wavelength of 852.347 nm ± 0.6 nm, suitable for Cesium spectroscopy
- Low Threshold Current: Starts at just 30 mA for efficient operation
- Temperature Stability: Guaranteed ±10°C around room temperature for consistent performance
- Advanced Technology: Monolithic single-frequency Gallium Arsenide (GaAs) design for high precision
- Passivated Facets: For improved reliability and reduced degradation over time
- Multiple Packaging Options: Available in CoS, MHF, and TOSA configurations for flexibility in integration
Applications
- Cesium Spectroscopy: Ideal for atomic spectroscopy in Cesium-based experiments
- Raman Spectroscopy: Used in high-precision Raman spectroscopy applications
- Laser Cooling and Trapping: Suitable for laser cooling transitions in atomic physics
- Fundamental Mode Operation: Ensures consistent performance with minimal divergence
- Precision Measurements: Essential for experimental setups requiring wavelength stability and low noise
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Ships from:
United States
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On FindLight:
since 2019
Frequently Asked Questions
The nominal wavelength of the 852.347 nm DBR laser diode is 852.347 nm ± 0.6 nm. This is ideal for Cesium-based atomic spectroscopy and Raman spectroscopy applications.
The operating temperature range for the laser diode at the case level is 5°C to 70°C, while the laser chip operates within a range of 5°C to 45°C.
The laser diode offers a wide power range from 10 mW to 240 mW, catering to both low and high-power applications.
The nominal threshold current for the laser diode varies from 30 mA (low power) to 50 mA (high power), ensuring efficient operation across different power settings.