894.592 Single-Frequency DBR Laser Diode
Description
The 894.592 nm Distributed Bragg Reflector (DBR) Laser Diode is a high-performance edge-emitting laser designed for precision applications, particularly in Cesium-based atomic spectroscopy. Engineered with advanced monolithic single-frequency Gallium Arsenide (GaAs) technology, this laser diode delivers a single spatial mode beam, ensuring high beam quality and stability. Its passivated facets provide enhanced durability and reliability, making it ideal for long-term use in critical scientific applications.
This laser diode is specially Spectroscopy Certified to guarantee wavelength accuracy for the Cesium D1 transition within ±10°C from room temperature, ensuring reliable performance in precision measurement and research. Available in both low power (40-120 mW) and high power (80-240 mW) configurations, it provides flexibility to suit various operational requirements.
The 894.592 nm DBR Laser Diode is equipped with a variety of additional features, including a nominal wavelength of 894.592 nm ± 0.6 nm, high slope efficiency (0.85 W/A for low power, 0.9 W/A for high power), and minimal linewidth (500 kHz), making it a trusted choice for atomic clocks, quantum research, and high-precision spectroscopy applications. Furthermore, it offers customizable add-ons such as Mode-Hop Free (MHF) and Virtual Point Source (VPS) lenses, providing optimal beam performance and control for specialized use cases. With a wide operating temperature range and reliable packaging options, this laser diode meets the demanding needs of modern spectroscopy systems.
894.592 Single-Frequency DBR Laser Diode
Specifications |
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|---|---|
| Center Wavelength: | 0.894 ±.0.006 um |
| Output Power: | 80-240 mW |
| Operating Current, Max (CW & Pulsed): | 350 mA |
| Optical Power At Max Operating Current: | 240 mW |
| Storage Temperature: | 0 to +70 °C |
| Nominal Laser Linewidth @ LIV Current: | 500 kHz |
| Temperature Tuning Rate: | 0.06 nm/ºC |
| Polarization Extinction Ratio: | -20 dB |
| Operating Temperature (Chip): | +5 to 45 °C |
| Beam Divergence @ FWHM (θ|| X θ⊥): | 6 x 28 º |
| Laser Forward Voltage: | 2 V |
Features
Nominal Wavelength: 894.592 ± 0.6 nm for precise Cesium spectroscopy
Power Range: 40–240 mW, with two power options: low power (40–120 mW) and high power (80–240 mW)
Low Threshold Current: 40 mA (low power) and 50 mA (high power) for energy-efficient operation
High Slope Efficiency: 0.85 W/A (low power) and 0.9 W/A (high power) for optimal energy conversion
Reliable Performance: Guaranteed to hit Cs D1 transition ± 10°C from room temperature
Free-Space Package Add-Ons: Mode-Hop Free (MHF) and Virtual Point Source (VPS) options
Applications
Cesium Spectroscopy: Essential for precision measurement in atomic and molecular spectroscopy
Quantum Systems: Supports applications requiring stable single-frequency laser sources for quantum research
Precision Measurement: Ideal for high-accuracy applications in scientific research and development
Atomic Clocks: Crucial for Cesium-based atomic clock systems requiring narrow linewidth and stable output
Telecommunications: Used in advanced optical systems for wavelength division multiplexing (WDM) applications
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Ships from:
United States
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Sold by:
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On FindLight:
since 2019
Frequently Asked Questions
The 894.592 nm DBR Laser Diode is primarily used in Cesium-based atomic spectroscopy, specifically for the Cesium D1 transition. It is ideal for high-precision applications such as atomic clocks, quantum research, and precision measurement in scientific studies.
The 894.592 nm DBR Laser Diode comes in two power options: low power (40–120 mW) and high power (80–240 mW). This allows users to select the appropriate power level depending on their specific application needs.
The operating temperature for the laser diode at the case is between 5°C and 70°C, while the operating temperature at the laser chip is between 5°C and 45°C. This broad temperature range ensures reliable operation in various environments.
The nominal wavelength of the 894.592 nm DBR Laser Diode is 894.592 nm ± 0.6 nm, and it is Spectroscopy Certified to hit the Cs D1 transition within ± 10°C from room temperature. This ensures high accuracy for Cesium spectroscopy applications.
Yes, the 894.592 nm DBR Laser Diode offers free-space package add-ons, including Mode-Hop Free (MHF) and Virtual Point Source (VPS) lenses. These options provide additional flexibility for users in various spectroscopy setups.