Frequently Asked Questions

The 920 nm DBR Laser Diode is ideal for atomic spectroscopy (particularly strontium-based applications) and two-photon microscopy. It is also used in quantum research, scientific instrumentation, and precision measurements where stable and tunable laser output is required.

The 920 nm DBR Laser Diode has a power range of 80 to 240 mW, providing flexibility for a variety of high-performance applications. The maximum optical power is achieved at a 400 mA operating current.

The laser is built with monolithic single-frequency Gallium Arsenide (GaAs) technology, providing a single spatial mode beam with passivated facets for enhanced reliability. Additionally, the device has a polarization extinction ratio of -20 dB and is available with Mode-Hop Free (MHF) add-ons for optimized beam performance.

The nominal wavelength of the 920 nm DBR Laser Diode is 920 ± 0.6 nm. This tolerance ensures stable operation for precise wavelength-sensitive applications.

The 920 nm DBR Laser Diode can operate in a temperature range of 5°C to 70°C at the case, and the laser chip operates between 5°C and 45°C. It is important to ensure that the laser is operated within these temperature limits for optimal performance and longevity.

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