935 Single-Frequency DBR Laser Diode
Description
The 935 nm DBR Laser Diode is a high-performance edge-emitting laser diode based on monolithic single-frequency Gallium Arsenide (GaAs) technology. It offers a single spatial mode beam and is designed for high precision applications, including ytterbium-based (Yb) atomic spectroscopy.
The device features passivated facets, ensuring superior reliability and consistent performance in demanding environments. With a power range of 80 to 180 mW, this diode achieves optical power output up to 240 mW at 350 mA operating current. The laser also provides an excellent slope efficiency of 0.9 W/A and a threshold current of 30 mA, making it highly efficient for research and scientific applications.
Additionally, it has a polarization extinction ratio of -20 dB and a side mode suppression ratio of -40 dB, guaranteeing high-quality output. Available with optional Mode-Hop Free (MHF) add-ons, this laser diode is well-suited for demanding scientific fields, including ytterbium-based spectroscopy and quantum optics.
935 Single-Frequency DBR Laser Diode
Specifications |
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Center Wavelength: | 0.935 ±.0.006 um |
Output Power: | 80-180 mW |
Operating Current, Max (CW & Pulsed): | 350 mA |
Optical Power At Max Operating Current: | 240 mW |
Storage Temperature: | 0 to +70 °C |
Nominal Laser Linewidth @ LIV Current: | 500 kHz |
Temperature Tuning Rate: | 0.06 nm/ºC |
Polarization Extinction Ratio: | -20 dB |
Operating Temperature (Chip): | +5 to +45 °C |
Beam Divergence @ FWHM (θ|| X θ⊥): | 6 x 28 º |
Laser Forward Voltage: | 2 V |
Features
- Monolithic GaAs Technology: Ensures a stable and high-performance laser output
- Single Spatial Mode Beam: Delivers highly collimated and focused output
- High Power Output: Power range of 80-180 mW, with a maximum optical power of 240 mW at 350 mA
- Polarization Extinction Ratio: Ensures a -20 dB extinction ratio for efficient polarization
- Slope Efficiency: High slope efficiency of 0.9 W/A for excellent energy conversion
- Side Mode Suppression Ratio (SMSR): Achieves -40 dB for superior signal integrity
Applications
- Ytterbium-Based Atomic Spectroscopy: Ideal for precision measurements in ytterbium-based spectroscopy applications
- Two-Photon Microscopy: Used in advanced imaging and research involving two-photon absorption
- Quantum Research and Optics: Suited for experiments requiring precise and stable laser output
- Scientific Instrumentation: Provides consistent performance in various high-demand research and industrial tools
- Precision Measurements: Perfect for high-accuracy applications requiring fine-tuned wavelength control
For pricing, technical or any other questions please contact the supplier
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Ships from:
United States
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Sold by:
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On FindLight:
since 2019
Frequently Asked Questions
The 935 nm DBR Laser Diode is primarily used in ytterbium-based atomic spectroscopy applications. It is also ideal for quantum research, two-photon microscopy, and high-precision measurements, offering stable and consistent performance for demanding scientific experiments.
The 935 nm DBR Laser Diode offers a power range of 80 to 180 mW, with a maximum optical power output of 240 mW at 350 mA operating current. This ensures strong and reliable performance in high-demand applications.
The laser diode has a polarization extinction ratio of -20 dB, which helps maintain excellent polarization control and ensures high-quality output, making it suitable for precision polarization-sensitive applications.
The laser operates at a nominal wavelength of 935 nm with a tolerance of ±1.0 nm, ensuring precise and stable wavelength output. This level of stability is crucial for high-accuracy applications in spectroscopy and research.
The operating temperature for the 935 nm DBR Laser Diode is between 5°C and 70°C at the case, while the laser chip should be kept between 5°C and 45°C for optimal performance and longevity.