EYP-DBR-0633-00010-2000-BFW01-0005 SINGLE FREQUENCY LASER DIODE
Description
633 nm DBR Laser with hermetic 14-Pin Butterfly Housing (RoHS compliant) including Monitor Diode, Thermoelectric Cooler and Thermistor.
EYP-DBR-0633-00010-2000-BFW01-0005 SINGLE FREQUENCY LASER DIODE
Specifications |
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|---|---|
| Center Wavelength: | 0.633 um |
| Output Power: | 5 mW |
Applications
- Spectroscopy, Metrology, Sensing
- HeNe Laser Replacement
For pricing, technical or any other questions please contact the supplier
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Ships from:
Germany
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Frequently Asked Questions
The absolute maximum ratings for the laser diode include a storage temperature of -40 to 85°C, an operational temperature at case of -20 to 75°C, an operational temperature at laser chip of -5 to 25°C, a forward current of 180 mA, a reverse voltage of 2 V, and an output power of 12 mW.
The applications of this laser diode include spectroscopy, metrology, and sensing. It can also be used as a replacement for HeNe lasers.
The recommended operational conditions for the laser diode include an operational temperature at case of 0-50°C, an operational temperature at laser chip of 0-18°C, a forward current of 100-160 mA, and an output power of 5 mW.
The output power of the laser diode is 12 mW.
The wavelength of the laser diode is 633 nm.