EYP-RWL-0790-00100-1500-SOT02-0000 GaAs Semiconductor Laser Diode
Description
790 nm Fabry-Perot Laser sealed SOT Housing Monitor Diode.
EYP-RWL-0790-00100-1500-SOT02-0000 GaAs Semiconductor Laser Diode
Specifications |
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|---|---|
| Center Wavelength: | 0.79 um |
| Output Power: | 110 mW |
Applications
- Spectroscopy
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Ships from:
Germany
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Frequently Asked Questions
The center wavelength of the laser diode is between 783 nm and 797 nm.
The maximum output power of the laser diode is 110 mW.
The package pinout of the laser diode is M-Type Ground (1), Photo Diode (+) (2), and Laser (+) (3).
The polarization of the laser diode is TM (transverse magnetic) with the electric field perpendicular to the Pin 2-Pin 3 plane.
The recommended operational temperature range for the laser diode is between -20°C and 50°C.
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