EYP-RWL-0808-00800-4000-BFW02-0010 GaAs Semiconductor Laser Diode
Description
808 nm Ridge Waveguide Laser with hermetic Butterfly Housing Monitor Diode Collimated beam RoHS compliant.
EYP-RWL-0808-00800-4000-BFW02-0010 GaAs Semiconductor Laser Diode
Specifications |
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Center Wavelength: | 0.808 um |
Output Power: | 900 mW |
Applications
- Metrology
For pricing, technical or any other questions please contact the supplier
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Ships from:
Germany
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Sold by:
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On FindLight:
External Vendor
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Frequently Asked Questions
Yes, the laser diode is RoHS compliant.
The maximum output power of the laser diode is 0.9 W peak.
The polarization extinction ratio of the laser diode is 90%.
The recommended operational temperature range for the laser diode is between -20°C and 75°C at the case.
The center wavelength of the laser diode is between 796 nm and 816 nm.
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