EYP-RWL-0808-00800-4000-CMT04-0000 GaAs Semiconductor Laser Diode
Description
808 nm Fabry-Perot Laser, C-Mount Package.
EYP-RWL-0808-00800-4000-CMT04-0000 GaAs Semiconductor Laser Diode
Specifications |
|
|---|---|
| Center Wavelength: | 0.808 um |
| Output Power: | 900 mW |
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Ships from:
Germany
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On FindLight:
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Frequently Asked Questions
The beam propagation factor of the laser diode is M² < 1.2.
The center wavelength of the laser diode is between 796 nm and 816 nm.
The maximum output power of the laser diode is 0.9 W.
The package type of the laser diode is C-Mount.
The recommended operational temperature range for the laser diode is between 5°C and 35°C.
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