EYP-RWL-1060-00100-0750-SOT01-0000 GaAs Semiconductor Laser Diode
Description
1060 nm Fabry-Perot Laser with hermetic TO Housing, Monitor Diode.
EYP-RWL-1060-00100-0750-SOT01-0000 GaAs Semiconductor Laser Diode
Specifications |
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|---|---|
| Center Wavelength: | 1.06 um |
| Output Power: | 110 mW |
Applications
- Spectroscopy
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How to order?
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Ships from:
Germany
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On FindLight:
External Vendor
Claim Eagleyard Photonics GmbH Page to edit and add data
Frequently Asked Questions
The center wavelength of the laser diode is 1060 nm.
The output power of the laser diode is 10-100 mW at a forward current of 160 mA.
The package pinout of the laser diode includes ground and a photo diode (+), but additional information on the pinout is not provided in the product description.
The polarization of the laser diode is TE, with the electric field parallel to the Pin 2-Pin 3 plane.
The recommended operational temperature range for the laser diode is -20 to 50°C at the case.
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