HL8340MG-A-41MG-A 852nm 50mW GaAlAs Laser Diode
Description
The HL8340MG-A/41MG-A is a high-performance GaAlAs laser diode with a lasing wavelength of 852nm and an optical output power of 50mW (CW). It operates at a low voltage of up to 2.4V and features a compact package size of φ5.6mm. With single transverse mode and TE mode oscillation, it is ideal for sensor applications, night vision, machine vision, and as a light source for optical equipment.
Safety and Operational Information
- Eye Safety: The laser light emitted is harmful to the human eye. The laser beam should be observed or adjusted through an infrared camera or equivalent device.
- Usage Conditions: The diode should be used within the ranges guaranteed by Ushio. Exceeding these ranges may cause failure or damage.
- Disposal: The product contains gallium arsenide (GaAs), which may be hazardous to health. It should be disposed of following the laws of the relevant country and separated from other waste.
- Hazardous Radiation Exposure: Use of controls or adjustments or performance of procedures other than those specified may result in hazardous radiation exposure.
This laser diode module is suitable for industries such as security, automation, and optical research where infrared illumination or sensing is required. It is important to handle the product with care, especially considering eye safety and proper disposal methods.
HL8340MG-A-41MG-A 852nm 50mW GaAlAs Laser Diode
Specifications |
|
|---|---|
| Center Wavelength: | 0.852 um |
| Output Power: | 50 mW |
| Threshold Current: | 20 mA |
| Operating Current: | 75 mA |
| Operating Voltage: | 1.9 V |
| Beam Divergence (Parallel To The Junction): | 6° |
| Beam Divergence (Perpendicular To The Junction): | 18° |
| Monitor Current: | 0.25 mA |
| 0.25: | 50 mW |
| LD Reverse Voltage: | 2 V |
| PD Reverse Voltag: | 30 V |
| Operating Temperature: | -10 to +60 °C |
| Storage Temperature: | -40 to +85 °C |
Features
- Operation Temperature Range: The diode is capable of operating in temperatures ranging from -10°C to +60°C, making it suitable for use in various environments.
- Optical Output Power: The diode has an optical output power of 50mW in continuous wave (CW) mode, which is relatively low power but sufficient for sensitive applications like sensors or night vision.
- Infrared Lasing at 852nm: The diode emits infrared laser light at a typical wavelength of 852nm, making it invisible to the naked eye but detectable by certain sensors or cameras.
- Low Operating Voltage: The module requires a maximum operating voltage of 2.4V, making it energy efficient and suitable for battery-operated devices.
- Compact Package: The diode comes in a compact package with a diameter of 5.6mm, making it ideal for applications where space is limited.
- Single Transverse Mode and TE Mode Oscillation: The diode operates in a single transverse mode and TE mode oscillation, which implies it produces a highly directional and coherent beam of light.
Applications
- Sensor Applications: This laser diode can be used in sensor systems, such as motion detectors or proximity sensors, due to its precise infrared lasing and low optical output power.
- Night Vision: It can be used in night vision equipment, where the infrared light emitted by the diode can be detected by cameras or goggles to create images in low light conditions.
- Machine Vision: This module can be applied in industrial automation for machine vision systems that require infrared illumination for object recognition, inspection, or measurement.
- Light Source for Optical Equipment: Being an infrared laser diode, it can serve as a light source for various optical instruments that require infrared illumination, such as spectroscopes or infrared scopes.
For pricing, technical or any other questions please contact the supplier
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since 2014