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REP1392-DM-B: Stabilized Narrow-Linewidth Laser Diode 1378-1400nm

RPMC Lasers, Inc. Sponsored

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The REP series includes high-performance, tunable, single-frequency (DFB-like) diode lasers and Fabry-Perot laser diodes in wavelengths from 1270nm thru 2350nm, designed to address challenges in Gas Sensing, LIDAR, Spectroscopy, and Telecom. The REP series includes high-power and narrow linewidth options, covering various product ...

Specifications
Center Wavelength:	1.392 um
Output Power:	8 mW

Data Sheet

LBX-638-180-CSB: 638nm Laser Diode Module

RPMC Lasers, Inc. Sponsored

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The LBX-638-XXX-CSB laser diode module is part of the LaserBoxx low noise series of CW DPSS laser and laser diode modules available at a variety of wavelengths from 375nm through 980nm. The LBX lasers are a fully integrated laser diode solution that provides an extremely stable, <0.2% rms, TEM00 output beam with ...

Specifications
Center Wavelength:	0.638 um
Output Power:	180 mW

Data Sheet

TPGAx2S09H Pulsed Laser Diodes

Pacer USA LLC

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Pulsed semiconductor lasers in the near IR are commonly used for long-distance time-of-flight or phase-shift range-finder or LIDAR systems. Excelitas offers a broad range of ideally-suited pulsed 905 nm laser designs including multi-cavity monolithic structures with up to 4 active areas per chip resulting in up to 100 W of peak ...

Specifications
Output Power (avg):	-- W
Wavelength:	0.905 um
Pulse Duration:	1-1ns
Tuning Range Around Center Wavelength:	Not Applicable
Peak Power:	150 W

TPGAx2S03H Pulsed Laser Diodes

Pacer USA LLC

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Pulsed semiconductor lasers in the near IR are commonly used for long-distance time-of-flight or phase-shift range-finder or LIDAR systems. Excelitas offers a broad range of ideally-suited pulsed 905 nm laser designs including multi-cavity monolithic structures with up to 4 active areas per chip resulting in up to 100 W of peak ...

Specifications
Output Power (avg):	-- W
Wavelength:	0.905 um
Pulse Duration:	1-1ns
Tuning Range Around Center Wavelength:	Not Applicable
Peak Power:	45 W

QPGAx1S09H Pulsed Laser Diodes

Pacer USA LLC

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Pulsed semiconductor lasers in the near IR are commonly used for long-distance time-of-flight or phase-shift range-finder or LIDAR systems. Excelitas offers a broad range of ideally-suited pulsed 905 nm laser designs including multi-cavity monolithic structures with up to 4 active areas per chip resulting in up to 100 W of peak ...

Specifications
Output Power (avg):	-- W
Wavelength:	0.905 um
Pulse Duration:	1-1ns
Tuning Range Around Center Wavelength:	Not Applicable
Peak Power:	90 W

QPGAx1S03H Pulsed Laser Diodes

Pacer USA LLC

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Pulsed semiconductor lasers in the near IR are commonly used for long-distance time-of-flight or phase-shift range-finder or LIDAR systems. Excelitas offers a broad range of ideally-suited pulsed 905 nm laser designs including multi-cavity monolithic structures with up to 4 active areas per chip resulting in up to 100 W of peak ...

Specifications
Output Power (avg):	-- W
Wavelength:	0.905 um
Pulse Duration:	1-1ns
Tuning Range Around Center Wavelength:	Not Applicable
Peak Power:	30 W

TPGAx1S09H Pulsed Laser Diodes

Pacer USA LLC

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Pulsed semiconductor lasers in the near IR are commonly used for long-distance time-of-flight or phase-shift range-finder or LIDAR systems. Excelitas offers a broad range of ideally-suited pulsed 905 nm laser designs including multi-cavity monolithic structures with up to 4 active areas per chip resulting in up to 100 W of peak ...

Specifications
Output Power (avg):	-- W
Wavelength:	0.905 um
Pulse Duration:	1-1ns
Tuning Range Around Center Wavelength:	Not Applicable
Peak Power:	75 W

TPGAx1S03H Pulsed Laser Diodes

Pacer USA LLC

Add to watch list

Pulsed semiconductor lasers in the near IR are commonly used for long-distance time-of-flight or phase-shift range-finder or LIDAR systems. Excelitas offers a broad range of ideally-suited pulsed 905 nm laser designs including multi-cavity monolithic structures with up to 4 active areas per chip resulting in up to 100 W of peak ...

Specifications
Output Power (avg):	-- W
Wavelength:	0.905 um
Pulse Duration:	1-1ns
Tuning Range Around Center Wavelength:	Not Applicable
Peak Power:	23 W

DPGAx1S09H Pulsed Laser Diodes

Pacer USA LLC

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Pulsed semiconductor lasers in the near IR are commonly used for long-distance time-of-flight or phase-shift range-finder or LIDAR systems. Excelitas offers a broad range of ideally-suited pulsed 905 nm laser designs including multi-cavity monolithic structures with up to 4 active areas per chip resulting in up to 100 W of peak ...

Specifications
Output Power (avg):	-- W
Wavelength:	0.905 um
Pulse Duration:	1-1ns
Tuning Range Around Center Wavelength:	Not Applicable
Peak Power:	50 W

DPGAx1S03H Pulsed Laser Diodes

Pacer USA LLC

Add to watch list

Pulsed semiconductor lasers in the near IR are commonly used for long-distance time-of-flight or phase-shift range-finder or LIDAR systems. Excelitas offers a broad range of ideally-suited pulsed 905 nm laser designs including multi-cavity monolithic structures with up to 4 active areas per chip resulting in up to 100 W of peak ...

Specifications
Output Power (avg):	-- W
Wavelength:	0.905 um
Pulse Duration:	1-1ns
Tuning Range Around Center Wavelength:	Not Applicable
Peak Power:	16 W

PGAx1S09H Pulsed Laser Diodes

Pacer USA LLC

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Pulsed semiconductor lasers in the near IR are commonly used for long-distance time-of-flight or phase-shift range-finder or LIDAR systems. Excelitas offers a broad range of ideally-suited pulsed 905 nm laser designs including multi-cavity monolithic structures with up to 4 active areas per chip resulting in up to 100 W of peak ...

Specifications
Output Power (avg):	-- W
Wavelength:	0.905 um
Pulse Duration:	1-1ns
Tuning Range Around Center Wavelength:	Not Applicable
Peak Power:	25 W

PGAx1S03H Pulsed Laser Diodes

Pacer USA LLC

Add to watch list

Pulsed semiconductor lasers in the near IR are commonly used for long-distance time-of-flight or phase-shift range-finder or LIDAR systems. Excelitas offers a broad range of ideally-suited pulsed 905 nm laser designs including multi-cavity monolithic structures with up to 4 active areas per chip resulting in up to 100 W of peak ...