DPGEW1S03H 905 nm Pulsed Semiconductor Laser
Description
Excelitas Technologies’ PGEW Series of single- and multi-epi 905 nm pulsed semiconductor lasers consists of a series of devices having up to four active lasing layers epitaxially grown on a single GaAs substrate chip. This multi-layer design multiplies the output power by the number of epi-layers. For example, the QPGEW quad laser at 225 µm active layer width, which has four epitaxially grown lasing layers, delivers an output peak power close to 100 W. The T1 ¾ (TO-like) plastic encapsulated package complements Excelitas' epi-cavity lasers in hermetic metal packages and are ideally suited for high volume applications. The lasers employ Excelitas’ novel multi-active area laser chips to deliver high output power in a small emitting area. The laser chips of the PGEW family feature stripe widths of 75 and 225 µm and come as single (PGEW), double (DPGEW), triple (TPGEW), or quadruple (QPGEW) epi-cavity version. These devices possess a 25° beam divergence in the direction perpendicular to chip surface and a 10° beam spread within the junction plane. The power output shows an excellent stability over the full MIL specification temperature range. Structures are fabricated using metal organic chemical vapour deposition (MOCVD). Where fiber coupling applications are concerned, the transverse spacing of the epi-cavity active area concentrates more optical power into a smaller geometry allowing for increased optical power coupling into optical fibers. Peak wavelength is centered near the maximum responsivity of most silicon photodiodes. The PGEW lasers match especially well with devices from the Excelitas epi-APD family C30737. The devices are ideally suited for applications where cost is a primary concern and high volume production capacity is required.
DPGEW1S03H 905 nm Pulsed Semiconductor Laser
Specifications |
|
|---|---|
| Output Power (avg): | -- W |
| Wavelength: | 0.905 um |
| Pulse Duration: | 00-00ns |
| Tuning Range Around Center Wavelength: | Not Applicable |
| Peak Power: | 13 W |
Features
- Doubling tripling or quadrupling of the output power from a single epi-cavity chip with a small active area
- Peak power over 100 W at 20 ns pulse width
- High reliability
- Small emitting areas increase fiber coupled output
- Lower cost plastic packaging for high volume
- RoHS compliant
Applications
- Laser range finding
- Laser-based speed enforcement
- IR-illumination
- Laser skin therapy
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