AlN Laser Diode Carriers - Metallisations
Description
Various metallisation schemes can be applied to form conductors, integral resistors, solder barriers, solder dams etc. The Au and barrier layer thicknesses depend on the application. Generally for Au wire bonding 0.5µm minimum of Au is required. For Pt or Pd barrier layers a minimum of 0.2µm is usually specified. Front and back faces of the component can be electrically interconnected using pre-drilled metallised thru-holes. Typical hole diameter = substrate thickness. Plain submounts can also be fabricated with metallisation that wraps around one or multiple sides walls to connect the top and bottom faces. Wrap around connections can also be accomplished on patterned mounts, with due consideration to process limitations and cost.
AlN Laser Diode Carriers - Metallisations
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Ships from:
United Kingdom
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On FindLight:
since 2020
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