1250 Ion Source
Description
1250 Ion Source
Specifications |
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|---|---|
| Beam Diameter: | 74 mm |
| Energy Range: | 0.3-0.3keV |
| Beam Power: | 1250 W |
| Beam Divergence: | 80 deg |
| Weight: | 28 kg |
Features
- Ion beam energies up to 300eV
- Ion beam currents to 15 amps
- Full-time use of high purity oxygen, argon or nitrogen.
- Highly efficient design greatly reduces gas load
- Water-cooled to reduce maintenance and radiation load
- Extremely low maintenance. The patented design utilizes a specially coated anode, which resists build-up of electrically insulating oxide coatings. No routinely replacement parts.
- Extremely stable operation in IAD processes
- Broad – beam divergence for large area coverage with uniform ion flux.
- Pulse-mode operation for ion-assistance of radiation-sensitive film materials such as many commonly used infrared and UV thin film materials eg MgF2 & LaF2. For further information please refer to separate information sheets.
- Remote Control and Monitoring – all control through an RS232 interface
For pricing, technical or any other questions please contact the supplier
- No registration required
- No markups, no fees
- Direct contact with supplier
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How to order?
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Ships from:
United States
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Sold by:
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On FindLight:
External Vendor
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Frequently Asked Questions
The price of the Mini UHV Ion Beam Source Model 750 includes source with single filament, power supply, feedthroughs, one mass flow controller, and cables for installation.
The maximum beam current available in the Model 1250 Ion Beam system is up to 15 amps (to a maximum of 1250W).
The Mini UHV Ion Beam Source Model 750 is a constant DC filtered Source which can be pumped into the 10^-10 Torr vacuum range capable of energies up to 225eV, with beam current of up to 1.5 amps in oxygen, nitrogen or argon (500W maximum).
The pulse-mode operation is used for ion-assistance of radiation-sensitive film materials such as many commonly used infrared and UV thin film materials eg MgF2 & LaF2.
The Telemark ion beam source line is capable of either mixed gas or pure oxygen operation, allowing for deposition of metal oxide films of the highest index and lowest stress.